Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs
Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs
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采用双栅极单片双向 GaN e-FET 的三相二三分之二 PWM 降压-升压电流源逆变器系统
DOI：
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发表时间：
2019
期刊：
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通讯作者：
H. Ishida
中科院分区：
文献类型：
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作者：
M. Guacci;Daifei Zhang;Mina Tatić;D. Bortis;J. Kolar;Y. Kinoshita;H. Ishida
最新的双栅极 (2G) 单片双向 (MB) 氮化镓 (GaN) 增强型场效应晶体管 (e-FET) 实现了当前直流母线逆变器的性能突破，例如在功率转换效率、功率密度、成本和复杂性方面。事实上，单个 2G MB GaN e-FET 可以取代该逆变器拓扑中所需的两个反串联传统功率半导体，实现具有双向电压阻断能力并允许受控双向电流流动的四象限 (AC) 开关。此外，如本文所示，在三相 (3-Φ) 降压-升压 (bB) 电流源逆变器 (CSI) 系统包括直流母线电流施加降压型 DC/DC 输入级和后续升压型 3-Φ 电流直流母线逆变器输出级的情况下，基于协同控制概念的可变直流母线电流控制策略可应用于 显着降低 3-Φ 逆变器中发生的开关损耗。该策略被命名为三分之二脉宽调制 (2/3-PWM)，因为通过使用输入级正确调整直流母线电流，可以通过在每个开关周期中仅切换输出级三相中的两相来生成所需的 3-Φ 正弦负载相电流。基于全面的电路仿真和分析计算，详细解释了不同工作条件下所开发的调制和控制方案，并证实了 2/3-PWM 能够降低损耗。接下来，演示了 3-Φ bB CSI 系统从 2/3-PWM 到传统 3/3-PWM 的无缝过渡。最后，一个 3.3 kW 3-Φ bB CSI 系统，应用 2/3-PWM 并在 3-Φ 逆变器中采用 2G MB GaN e-FET 研究样本，预计在 140 kHz 开关频率下实现 98.4% 的效率和 18 kW/dm(295 W/in) 的功率密度。
Latest dual-gate (2G) monolithic bidirectional (MB) gallium nitride (GaN) enhancement-mode field effect transistors (e-FETs) enable a performance breakthrough of current DC-link inverters, e.g., in terms of power conversion efficiency, power density, cost and complexity. In fact, a single 2G MB GaN e-FET can replace the two anti-series connected conventional power semiconductors required in this inverter topology, realizing a four-quadrant (AC) switch with bidirectional voltage blocking capability and allowing controlled bidirectional current flow. Furthermore, as shown in this paper in case of three-phase (3-Φ) buck-boost (bB) current source inverter (CSI) systems comprising a DC-link current impressing buck-type DC/DC input stage and a subsequent boost-type 3-Φ current DC-link inverter output stage, a variable DC-link current control strategy, based on a Synergetic Control concept, can be applied to significantly reduce the switching losses occurring in the 3-Φ inverter. This strategy is denominated two-third pulse-width modulation (2/3-PWM), since by properly shaping the DC-link current with the input stage, the desired 3-Φ sinusoidal load phase currents can be generated by switching, in each switching period, only two out of the three phases of the output stage. Based on comprehensive circuit simulations and analytical calculations, a detailed explanation of the developed modulation and control schemes in different operating conditions is provided, and the reduction of losses enabled by 2/3-PWM is confirmed. Next, the seamless transition of the 3-Φ bB CSI system from 2/3-PWM to conventional 3/3-PWM is demonstrated. Finally, a 3.3 kW 3-Φ bB CSI system, applying 2/3-PWM and employing research samples of 2G MB GaN e-FETs in the 3-Φ inverter, is estimated to achieve an efficiency of 98.4% and a power density of 18 kW/dm(295 W/in) at a switching frequency of 140 kHz.