Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H + - and D + -Implanted Ga 2 O 3
Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H + - and D + -Implanted Ga 2 O 3
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编辑选择 – H 和 D 注入 Ga 2 O 3 中氧-氢中心的振动特性
DOI：
10.1149/2162-8777/abd458
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发表时间：
2020
影响因子：
2.2
通讯作者：
Pearton, Stephen J.
中科院分区：
文献类型：
--
作者：
Portoff, Amanda;Venzie, Andrew;Qin, Ying;Stavola, Michael;Fowler, W. Beall;Pearton, Stephen J.
H+和D+离子注入ga2o3会产生若干O - H和O - D中心，并通过振动光谱对其进行了研究。这些缺陷包括先前研究的主要V Ga (1)-2H和V Ga (1)-2D中心，以及可以通过热退火转化为该结构的其他缺陷。分析了光谱的极化依赖关系，确定了缺陷过渡矩的方向，并提供了缺陷结构的信息。实验结果表明，在ga2o3中注入H+（或D+）会产生两类具有不同极化特性的缺陷。理论发现，这些O-H（或O-D）中心是基于捕获H（或D）原子的Ga(1)空位的两个移位构型。还研究了注入样品中V - Ga (1)-nD中心与其他缺陷的相互作用，以帮助解释所看到的O-D线的数量及其在退火时的反应。以氢化距离V - Ga (1)-V - O中心为例。
The ion implantation of H+ and D+ into Ga 2 O 3 produces several O–H and O–D centers that have been investigated by vibrational spectroscopy. These defects include the dominant V Ga (1)-2H and V Ga (1)-2D centers studied previously along with additional defects that can be converted into this structure by thermal annealing. The polarization dependence of the spectra has also been analyzed to determine the directions of the transition moments of the defects and to provide information about defect structure. Our experimental results show that the implantation of H+(or D+) into Ga 2 O 3 produces two classes of defects with different polarization properties. Theory finds that these O–H (or O–D) centers are based on two shifted configurations of a Ga (1) vacancy that trap H (or D) atom (s). The interaction of V Ga (1)-nD centers with other defects in the implanted samples has also been investigated to help explain the number of O–D lines seen and their reactions upon annealing. Hydrogenated divacancy V Ga (1)-V O centers have been considered as an example.