Characterization of the distribution of defects introduced by plasma exposure in Si substrate
Characterization of the distribution of defects introduced by plasma exposure in Si substrate
复制标题
Si 衬底中等离子体暴露引入的缺陷分布特征
DOI：
10.1116/1.5048027
复制
发表时间：
2019
影响因子：
2.9
通讯作者：
Eriguchi Koji
中科院分区：
文献类型：
--
作者：
Sato Yoshihiro;Shibata Satoshi;Uedono Akira;Urabe Keiichiro;Eriguchi Koji
