Compact modeling of the effects of parasitic internal fringe capacitance on the threshold voltage of high-k gate-dielectric nanoscale SOI MOSFETs
Compact modeling of the effects of parasitic internal fringe capacitance on the threshold voltage of high-k gate-dielectric nanoscale SOI MOSFETs
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DOI：
10.1109/ted.2006.870424
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发表时间：
2006-03
影响因子：
3.1
通讯作者：
M.J. Kumar;S.K. Gupta;V. Venkataraman
中科院分区：
文献类型：
--
作者：
M.J. Kumar;S.K. Gupta;V. Venkataraman
A compact model for the effect of the parasitic internal fringe capacitance on the threshold voltage of high-k gate-dielectric silicon-on-insulator MOSFETs is developed. The authors' model includes the effects of the gate-dielectric permittivity, spacer oxide permittivity, spacer width, gate length, and the width of an MOS structure. A simple expression for the parasitic internal fringe capacitance from the bottom edge of the gate electrode is obtained and the charges induced in the source and drain regions due to this capacitance are considered. The authors demonstrate an increase in the surface potential along the channel due to these charges, resulting in a decrease in the threshold voltage with an increase in the gate-dielectric permittivity. The accuracy of the results obtained using the authors' analytical model is verified using two-dimensional device simulations.
