A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs
A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs
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DOI：
10.1109/ted.2010.2045670
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发表时间：
2010-04
影响因子：
3.1
通讯作者：
S. Dhar;S. Ryu;A. Agarwal
中科院分区：
文献类型：
--
作者：
S. Dhar;S. Ryu;A. Agarwal
Detailed investigations on the pre-oxidation nitrogen implantation process for the improvement of channel mobility in 4H-SiC MOSFETs are reported. Comparisons with conventional thermally nitrided gate oxides are highlighted. The results of a nitrogen dose dependence study indicate that higher N implantation doses lead to higher peak field-effect mobilities but lower threshold voltages. This apparently correlates with the interface trap density near the conduction band of 4H-SiC, as previous work suggests, but an alternate mechanism associated with counter doping of the MOSFET p-well via N implantation is proposed here. Analysis of the experimental results suggests that the counter-doping mechanism is more likely to be the dominant effect.
