(Invited) The Impact of Oxide Precipitates on Minority Carrier Lifetime in Czochralski Silicon
(Invited) The Impact of Oxide Precipitates on Minority Carrier Lifetime in Czochralski Silicon
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（特邀）直拉硅中氧化物沉淀对少数载流子寿命的影响
DOI：
10.1149/05005.0137ecst
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Murphy J
中科院分区：
文献类型：
--
作者：
Murphy J
氧化物沉淀物在硅中形成，用于微电子和光伏应用，并充当强复合中心。我们测量了约50个p型和n型直拉硅片样品的少子寿命随注入的变化关系，样品中的沉淀物浓度范围很宽。我们发现，所有的数据可以参数化的两个独立的Shockley-Read-Hall中心。第一个是在EV+ 0.22 eV处，并且对电子157的捕获系数大于对空穴的捕获系数。第二个是在EC-0.08 eV，并且具有比电子大约1，200的空穴捕获系数。中心的密度大致取决于沉淀物浓度。沉淀物周围位错和堆垛层错的存在增加了两个中心的密度。
Oxide precipitates form in silicon for microelectronic and photovoltaic applications, and act as strong recombination centres. We have measured the injection-dependence of minority carrier lifetime in~ 50 samples from p-type and n-type Czochralski silicon wafers with a wide range of precipitate densities. We find that all the data can be parameterized in terms of two independent Shockley-Read-Hall centres. The first is at EV+ 0.22 eV, and has a capture coefficient for electrons 157 greater than that for holes. The second is at EC–0.08 eV and has a capture coefficient for holes~ 1,200 greater than that for electrons. The density of the centres is approximately dependent on the precipitate concentration. The existence of dislocations and stacking faults around the precipitates increases the density of both centres.