Charge Transport Anisotropy due to Interfacial Molecular Orientation in Polymeric Transistors with Controlled In-Plane Chain Orientation
Charge Transport Anisotropy due to Interfacial Molecular Orientation in Polymeric Transistors with Controlled In-Plane Chain Orientation
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DOI：
10.1143/apex.5.021602
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发表时间：
2012-02
影响因子：
2.3
通讯作者：
S. Watanabe;Hisaaki Tanaka;S. Kuroda;A. Toda;Haruki Tomikawa;Shusaku Nagano;T. Seki
中科院分区：
文献类型：
--
作者：
S. Watanabe;Hisaaki Tanaka;S. Kuroda;A. Toda;Haruki Tomikawa;Shusaku Nagano;T. Seki
本文报道了用改进的Langmuir-Blodgett方法制备的面内链取向可控的聚[2-甲氧基-5-（2'-乙基己氧基）-1,4-苯基乙烯]（MEH-PPV）超薄膜晶体管的电荷输移各向异性。五层晶体管的场效应迁移率达到3.0×10-4 cm2 V-1 s-1，平行和垂直链取向之间的各向异性比约为7.5。这与先前报道的具有π重叠层状结构的超薄聚（3-己基噻吩）晶体管的近二维迁移率各向异性形成鲜明对比。该器件的准一维各向异性归因于原子力显微镜证实的MEH-PPV的类平面取向导致的弱π -π堆叠结构。
We report charge transport anisotropy of ultrathin-film transistors of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with controlled in-plane chain orientation prepared by a modified Langmuir–Blodgett method. The field-effect mobility of a five-monolayer transistor reached 3.0×10-4 cm2 V-1 s-1 with a large anisotropy ratio of about 7.5 between parallel and perpendicular chain orientations. This is in sharp contrast to a nearly two-dimensional mobility anisotropy of the previously reported ultrathin poly(3-hexylthiophene) transistors having a π-overlapped lamellar structure. The quasi-one-dimensional anisotropy of the present device is ascribed to a weak π–π stacking structure due to a flat-on-like orientation of MEH-PPV confirmed by atomic force microscopy.