Lateral mode behavior of reactive‐ion‐etched stable‐resonator semiconductor lasers
Lateral mode behavior of reactive‐ion‐etched stable‐resonator semiconductor lasers
复制标题
反应离子蚀刻稳定谐振器半导体激光器的横向模式行为
DOI：
10.1063/1.359831
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发表时间：
1995
影响因子：
3.2
通讯作者：
A. Siegman
中科院分区：
文献类型：
--
作者：
S. Biellak;Y. Sun;S. Wong;A. Siegman
我们报告了单片稳定谐振器半导体激光器的实验结果。使用反应离子蚀刻在宽条 GaAs/AlGaAs GRINSCH-SQW 激光器上制造了定义近同心稳定谐振器的弯曲端镜。这些激光器在阈值处以接近预期的最低阶高斯稳定谐振器模式振荡，当泵浦电流增加到阈值的两到三倍时，演变成高阶模式的相干叠加。在较高的泵浦电流下，非线性散焦效应导致谐振器在几何上变得不稳定，因此横向模式由谐振器几何形状以及饱和增益和折射率分布决定。
We report experimental results on monolithic stable‐resonator semiconductor lasers. Curved end mirrors defining a near‐concentric stable resonator were fabricated on wide‐stripe GaAs/AlGaAs GRINSCH‐SQW lasers using reactive‐ion‐etching. These lasers oscillate in close to the expected lowest‐order Gaussian stable‐resonator modes at threshold, evolving into a coherent superposition of higher‐order modes as the pump current is increased up to two to three times threshold. At higher pump currents nonlinear defocusing effects cause the resonators to become geometrically unstable so that the lateral modes are determined by both the resonator geometry and the saturated gain and index profile.