Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring
Characteristics of high breakdown voltage Schottky barrier diodes using p+-polycrystalline-silicon diffused-guard-ring
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DOI：
10.1016/s0038-1101(99)00258-0
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发表时间：
2000-04-01
影响因子：
1.7
通讯作者：
Lee, CL
中科院分区：
文献类型：
--
作者：
Liou, BW;Lee, CL
提出了一种采用p（+）-多晶硅扩散保护环的肖特基二极管新结构。在950 ℃退火30分钟的条件下，二极管给出了接近理想的J-V特性，具有高的反向击穿电压（148 V）和低的反向漏电流密度（8.4 μ A/cm（2））。保护环结构防止过早击穿，多晶硅层防止表面漏电。实验还发现，随着加热炉驱动时间的增加，肖特基二极管的击穿电压也随之增加。肖特基二极管的击穿特性与硼离子在硅片中的扩散长度密切相关。对p（+）-多晶硅扩散保护环肖特基器件的电学特性与传统的扩散保护环样品进行了比较。(C)2000由爱思唯尔科学有限公司出版。版权所有。
A new structure of Schottky diode using the p(+)-polycrystalline silicon (polysilicon) diffused-guard-ring is proposed. For 950 degrees C with 30 min annealing condition, the diode gives a nearly ideal J-V characteristic with a high reverse breakdown voltage (148 V) and a low reverse leakage current density (8.4 mu A/cm(2)). The guard-ring structure prevents the premature breakdown; the polysilicon layer prevents the surface leakage. It was also found that the more the driving time of furnace, the higher the breakdown voltage of the Schottky diode. The breakdown characteristic of a Schottky diode was shown to be closely related with the diffusion length of the boron ions being inside the Si wafer. The electrical characteristics of the p(+)-polysilicon diffused-guard-ring Schottky device was compared with those of the conventional diffused-guard-ring sample. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.