Magnetic and electrical characteristics of MnAs films grown by metalorganic chemical vapour deposition
Magnetic and electrical characteristics of MnAs films grown by metalorganic chemical vapour deposition
复制标题
有机金属化学气相沉积MnAs薄膜的磁电特性
DOI：
10.1016/s0925-8388(96)02665-5
复制
发表时间：
1997
影响因子：
6.2
通讯作者：
P. Wright
中科院分区：
文献类型：
--
作者：
M. Tilsley;N. A. Smith;B. Cockayne;I. R. Harris;P. Lane;P. E. Oliver;P. Wright
用金属有机化学气相沉积法在蓝宝石衬底上生长的薄膜，在未开裂的材料中测量了与MnAs相变有关的磁和电特性的变化。薄膜的居里点在35-47±1°C范围内呈现一级相变。通过相变加热时测得薄膜电阻率增加约60%。在600 kA m−1的磁场中，薄膜的居里温度随着施加的磁场而增加约1.2°C。这种居里温度随外加磁场的变化也产生了磁阻效应，在600 kA m−1时最大值为2.24%。这些参数的值被证明是依赖于薄膜的生长条件。
The magnetic and electrical property of changes associated with the phase transition in MnAs have been measured in uncracked material by using thin films grown on to sapphire substrates by metal organic chemical vapour deposition. The films exhibited a first-order transition with Curie points in the range 35–47±1°C. An increase of approximately 60% in the electrical resistivity of the films was measured on heating through the phase transition. The Curie temperature of the films increased with an applied magnetic field by approximately 1.2°C in a field of 600 kA m−1. This shift in Curie temperature with applied magnetic field also produced a magnetoresistance effect with a maximum value of 2.24% at 600 kA m−1. The values of these parameters are shown to be dependent upon the growth conditions of the films.