Optical absorption and oxygen passivation of surface states in III-nitride photonic devices
Optical absorption and oxygen passivation of surface states in III-nitride photonic devices
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DOI：
10.1063/1.5022150
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发表时间：
2018-03-21
影响因子：
3.2
通讯作者：
Grandjean, Nicolas
中科院分区：
文献类型：
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作者：
Rousseau, Ian;Callsen, Gordon;Grandjean, Nicolas
III族氮化物表面态预计会影响高表面体积比器件，例如纳米和微米线发光二极管、晶体管和光子集成电路。在这项工作中，可逆的光致氧解吸从III族氮化物微盘谐振器表面显示，以增加100厘米（-1）的回音壁模式在λ-450 nm的光衰减。在无意中和n（+）掺杂的微盘的光致氧解吸的比较表明，光谱的变化源于表面费米能级的unpinning，可能发生在蚀刻的非极性III族氮化物侧壁。通过热退火制备的富氧表面导致宽带Q改善，在2.6 eV处达到超过1 × 10（4）的最新值。这些发现强调了光学活性表面态及其钝化对未来纳米III族氮化物光电和光子器件的重要性。(C)2018年作者。所有文章内容，除非另有说明，是根据知识共享署名（CC BY）许可证许可。
III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nanoand micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm(-1) at lambda-450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n(+)-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 x 10(4) at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices. (C) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.