High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications
High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications
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DOI：
10.35848/1347-4065/abc924
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发表时间：
2020-11
影响因子：
1.5
通讯作者：
Vuong Van Cuong;S. Ishikawa;Tomonori Maeda;H. Sezaki;T. Meguro;S. Kuroki
中科院分区：
文献类型：
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作者：
Vuong Van Cuong;S. Ishikawa;Tomonori Maeda;H. Sezaki;T. Meguro;S. Kuroki
在400 °C、N2气氛下，研究了基于Ni/Nb欧姆接触的4 H-SiC MOSFET集成电路的高温可靠性。结果表明，单级放大器在400 °C老化100 h后，电压增益保持稳定。基于转移长度法，Ni/Nb/n型4 H-SiC欧姆接触在400 °C时效100 h后仍具有良好的稳定性。而电学特性的稳定性表明，4 H-SiC MOSFET在高温环境下也表现出良好的稳定性。4 H-SiC MOS电容的电学特性稳定性表明，Ni/Nb/4 H-SiC欧姆接触的可靠性对SiC基器件的可靠性起着重要作用。这些结果表明，基于4 H-SiC器件的Ni/Nb欧姆接触集成电路的制造工艺是有希望的，适用于高温以及恶劣环境的应用。
The high-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts was investigated at 400 °C in N2 ambient. The results showed that the single stage amplifier remained a stable voltage gain after 100 h of aging at 400 °C. Based on the transfer length method, the Ni/Nb/n-type 4H-SiC ohmic contact exhibited the excellent stability after being aged at 400 °C for 100 h. Whereas, the stability of electrical characteristics indicated that the 4H-SiC MOSFET also exhibited a good stability when operating in high temperature environment. Moreover, the stability of the electrical characteristics of the 4H-SiC MOS capacitor showed that the reliability of the Ni/Nb/4H-SiC ohmic contact played important role in reliability of SiC based devices. These results indicate that the fabrication process of the integrated circuits based on 4H-SiC devices with Ni/Nb ohmic contacts is promising to apply for high temperature as well as harsh environment applications.