Measurement of concentration and photoionization cross section of indium in silicon
Measurement of concentration and photoionization cross section of indium in silicon
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DOI：
10.1063/1.332566
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发表时间：
1983-07
影响因子：
3.2
通讯作者：
G. Parker;S. D. Brotherton;I. Gale;A. Gill
中科院分区：
文献类型：
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作者：
G. Parker;S. D. Brotherton;I. Gale;A. Gill
变温霍尔效应测量、电容-电压（C-V）测量和无焰原子吸收已被用于评估铟掺杂硅（Si：In）晶体中铟的浓度。结果发现，无火焰原子吸收和C-V结果非常一致，但从霍尔效应数据中提取铟浓度并不是一个简单的练习，因为铟没有进入“耗尽"区域。然而，通过使用最近确定的空穴有效质量分析霍尔数据，并通过使用物理上合理的霍尔散射因子值，霍尔数据给出的铟浓度与其他两种技术非常一致。还使用红外吸收对Si：In衬底进行光学表征。这些结果与上述测定的铟浓度一起，在4 μm波长处产生了峰值铟光电离截面为（1.55±0.25）×10−16 cm 2。
Variable‐temperature Hall‐effect measurements, capacitance–voltage (C–V) measurements and flameless atomic absorption have been used to assess the concentration of indium in indium‐doped silicon (Si:In) crystals. It was found that the flameless atomic absorption and C–V results were in very good agreement, but the extraction of an indium concentration from Hall‐effect data was not a straightforward exercise due to the fact that the indium did not enter the ‘‘exhaustion’’ region. However, by analyzing the Hall data using a recent determination of the hole effective mass, and by using a physically reasonable value for the Hall scattering factor, the Hall data gave indium concentrations in very good agreement with the other two techniques. The Si:In substrates were also characterized optically using infrared absorption. These results, together with the indium concentrations determined above, yielded a peak indium photoionization cross section of (1.55±0.25)×10−16 cm2 at a 4‐μm wavelength.