Interfacial reactions of platinum thin films on (111) and (001) germanium
Interfacial reactions of platinum thin films on (111) and (001) germanium
复制标题
DOI：
10.1063/1.341137
复制
发表时间：
1988-02
影响因子：
3.2
通讯作者：
Y. Hsieh;Lun-Lun Chen-Lun
中科院分区：
文献类型：
--
作者：
Y. Hsieh;Lun-Lun Chen-Lun
结合平面视图和横截面透射电子显微镜研究已经进行了研究的界面反应在铂薄膜锗。发现Pt 2Ge、PtGe、Pt 2Ge 3和PtGe 2分别在160、250、350和400 °C下形成。在Pt 2Ge、PtGe和PtGe 2与（111）Ge之间观察到明确的取向关系。没有观察到铂锗化物在（001）Ge上的外延生长。结果被发现是部分不同的，从以前的调查中获得的。这种差异归因于两项研究中金属膜沉积之前的不同衬底清洁方案。在室温下，锗化铂在（111）Ge上的外延生长似乎与锗化物/Ge界面的晶格匹配没有直接关系。
A combined plan‐view and cross‐sectional transmission electron microscope study has been carried out to investigate the interfacial reactions in platinum thin films on germanium. Pt2Ge, PtGe, Pt2Ge3, and PtGe2 were found to form at 160, 250, 350, and 400 °C, respectively. Definite orientation relationships were observed between those of Pt2Ge, PtGe, and PtGe2 and (111)Ge. No epitaxial growth of platinum germanides on (001)Ge was observed. The results were found to be partially different from those obtained in a previous investigation. The discrepancy is attributed to different substrate cleaning schemes prior to the metal film depositions in the two studies. It appears that the growth of platinum germanide epitaxy on (111)Ge is not directly correlated with the lattice matches at germanide/Ge interfaces at room temperature.