Improvement of the structural properties and environmental stability of flexible InSb thin films by dopant-assisted crystallization
Improvement of the structural properties and environmental stability of flexible InSb thin films by dopant-assisted crystallization
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DOI：
10.1007/s00339-022-05694-8
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发表时间：
2022-06
期刊：
影响因子：
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通讯作者：
N. Nishimoto;J. Fujihara
中科院分区：
文献类型：
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作者：
N. Nishimoto;J. Fujihara
本研究采用多阴极射频磁控溅射法在石英衬底和聚酰亚胺(PI)薄膜上生长了InSb和InSb_1：−_xBix(x= _(0.01)，0.02，和0.03)薄膜。研究了掺铋对薄膜的结构性质、层错几率和环境电阻的影响。InSb/PI的性能不如InSb/石英，这是因为InSb/PI中的结构无序破坏了(111)取向的生长，择优取向为(220)。而掺铋的InSb/PI的结晶度与InSb/石英相当。随着铋含量的增加，InSb0.97Bi0.03/PI的择优取向从(220)晶面向(111)晶面的择优取向转变，从而抑制了晶体的结构无序，其层错几率与InSb/石英的相似。此外，掺铋还提高了InSb薄膜的环境稳定性。这些发现将支持半导体制造的创新，并将有助于减少这些材料的环境负担。
In this study, InSb and InSb1 −xBix(x= 0.01, 0.02, and 0.03) thin films were grown on quartz substrates and polyimide (PI) films by multi-cathode radio frequency magnetron sputtering. The effects of Bi doping on the structural properties, stacking-fault probabilities, and environmental resistance were investigated. The properties of the InSb/PI were inferior to those of the InSb/quartz because of the structural disorder in the InSb/PI which disrupted the (111)-oriented growth, and the preferred orientation was (220). However, the crystallinities of the Bi-doped InSb/PI were comparable with that of the InSb/quartz. The structural disorder was suppressed with the change in the preferred orientation from (220) to (111) as the Bi contentxwas increased, and the stacking-fault probability of InSb0.97Bi0.03/PI was similar to that of the InSb/quartz. Furthermore, the environmental stability of the InSb thin film was enhanced by Bi doping. These findings will support innovation in semiconductor fabrication and will help to decrease the environmental burden of these materials.