Crystallization and activation of silicon by microwave rapid annealing
Crystallization and activation of silicon by microwave rapid annealing
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DOI：
10.1007/s00339-016-0220-7
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发表时间：
2016-06
期刊：
影响因子：
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通讯作者：
S. Kimura;Kosuke Ota;M. Hasumi;Ayuta Suzuki;M. Ushijima;T. Sameshima
中科院分区：
文献类型：
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作者：
S. Kimura;Kosuke Ota;M. Hasumi;Ayuta Suzuki;M. Ushijima;T. Sameshima
提出了一种结合微波辐射的碳粉吸收剂快速加热方法。粒径为2 μ m、堆积密度为0.08的碳粉末能有效吸收2.45 GHz 1000 W微波，并能在26 s内加热到1163 °C。本热处理再结晶的n型晶体硅表面注入硼和磷原子的结晶体积比为0.99和0.93，分别在1000 W的微波照射20秒。活化和载流子的产生同时实现与薄层电阻率。还获得了高的光生载流子有效寿命。获得了典型的电流整流特性和低照度下效率为12.1%的太阳能电池特性。此外，在1000 W的微波辐射22秒的热处理成功地结晶硅薄膜的厚度范围从2.4到50 nm的石英衬底上形成。在1.8 nm（初始2.4 nm）厚的硅膜中形成了具有50%的高体积比的纳米晶簇结构。在微波加热之后，对于在260 °C下在Pa-H2O-蒸气中退火3 h的1.8-nm厚的硅膜，观察到约1.77eV的光致发光。
A combination of the carbon-powder absorber with microwave irradiation is proposed as a rapid heat method. 2-μm-diameter carbon powders with a packing density of 0.08 effectively absorbed 2.45 GHz 1000-W-microwave and heated themselves to 1163 °C for 26 s. The present heat treatment recrystallized n-type crystalline silicon surfaces implanted with-boron and phosphorus atoms with crystalline volume ratios of 0.99 and 0.93, respectively, by microwave irradiation at 1000 W for 20 s. Activation and carrier generation were simultaneously achieved with a sheet resistivity of. A high photo-induced-carrier effective lifetime ofs was also achieved. Typical electrical current-rectified characteristic and solar cell characteristic with an efficiency of 12.1 % underillumination were obtained. Moreover, heat treatment with microwave irradiation at 1000 W for 22 s successfully crystallized silicon thin films with thicknesses ranging from 2.4 to 50 nm formed on quartz substrates. Nano-crystalline cluster structure with a high volume ratio of 50 % was formed in the 1.8-nm (initial 2.4-nm)-thick silicon films. Photoluminescence around 1.77 eV was observed for the 1.8-nm-thick silicon films annealed at 260 °C in-Pa-H2O-vapor for 3 h after the microwave heating.