Drift transport of spin-polarized electrons in GaAs
Drift transport of spin-polarized electrons in GaAs
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DOI：
10.1023/a:1023206817511
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发表时间：
2003-02-01
期刊：
影响因子：
--
通讯作者：
Ohno, H
中科院分区：
文献类型：
--
作者：
Sanada, H;Arata, I;Ohno, H
通过时间分辨光注入和光致发光偏振测量，研究了砷化镓中自旋极化导电电子的输运性质。在几kV/cm的电场下，在小于4 μ m的漂移输运过程中，自旋极化程度明显降低。D‘yakonov- perel ’机制的自旋弛豫被认为是在低温下中等电场下热电子快速自旋去极化的原因。
We studied the transport properties of spin-polarized conduction electrons in GaAs by time-resolved photoinjection and photoluminescence polarization measurements. Under an electric field of a few kV/cm, the degree of the spin polarization considerably decreases during drift transport over the distance shorter than 4 mum. Spin relaxation by D'yakonov-Perel' mechanism is suggested to be the cause of such a rapid spin depolarization for hot electrons under a moderate electric field at low temperatures.