Synthesis, Characterization and Kinetics of Epitaxial-Oriented Silicon Nanowire Arrays on Si Substrates
Synthesis, Characterization and Kinetics of Epitaxial-Oriented Silicon Nanowire Arrays on Si Substrates
复制标题
硅衬底上外延取向硅纳米线阵列的合成、表征和动力学
DOI：
10.1016/j.phpro.2012.03.583
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
J. Sha
中科院分区：
文献类型：
--
作者：
Zongli Wang;J. Bao;Yuting Wan;W. Xia;Yewu Wang;J. Sha
制备具有可控密度和长度的垂直取向的高纵横比硅纳米线（SiNWs）对于基于纳米线的电子器件和光伏器件的发展具有重要意义。本文报道了一种既简单又经济的制备大面积外延硅纳米线阵列的方法，该方法是利用常规化学气相沉积炉系统，通过Au催化的气-液-固反应机理在Si（111）衬底上制备的。用扫描电镜和透射电镜分别研究了它们的形貌和微观结构。结果表明，大部分纳米线是垂直生长在衬底上的，其密度和长度可以很好地控制。所生长的硅纳米线由单晶硅芯和薄的非晶硅氧化物涂层组成。并对它们的生长动力学进行了详细的讨论。结果表明，纳米线生长过程中既存在衬底-纳米线Si吸附原子表面扩散，又存在轻微的径向生长，此外，对于这种外延硅纳米线，还发现了纳米线侧壁上Au的迁移。
The fabrication of vertical-oriented, high aspect ratio silicon nanowires (SiNWs) with controllable density and length is of interest for the development of nanowire-based electronics and photovoltaic devices. Here we reported a both simple and economical method for synthesizing large-area epitaxial-oriented SiNW arrays, which was achieved on the Si (111) substrates by Au catalyzed vapor-liquid-solid mechanism using the conventional chemical vapor deposition furnace system. Their morphologies and microstructures were investigated with scanning electron microscopy and transmission electron microscopy, respectively. The results showed that most of nanowires were vertically grown on substrates, their density and length can be well controlled. As-grown SiNW is composed of a single crystalline silicon core and a thin amorphous silicon oxide coating layer. Furthermore, their growth kinetics was discussed in detail. It indicates that there are both the substrate-nanowire Si adatom surface diffusion and the slight radial growth during the upgrowth of nanowire, and besides, the migration of Au on the sidewall of nanowire was also found for such epitaxial-oriental SiNWs.