The effect of thermal treatment on the stress state and evolving microstructure of Cu/W nano-multilayers
The effect of thermal treatment on the stress state and evolving microstructure of Cu/W nano-multilayers
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DOI：
10.1063/1.4967992
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发表时间：
2016-11-21
影响因子：
3.2
通讯作者：
Jeurgens, L. P. H.
中科院分区：
文献类型：
--
作者：
Cancellieri, C.;Moszner, F.;Jeurgens, L. P. H.
纳米多层器件和组件的功能和可靠性在很大程度上受到制造、加工和操作过程中应力演变的影响。通过原位高温 X 射线衍射和高分辨率扫描电子显微镜研究了热处理对通过磁控溅射沉积在不同基底（即 Si（001）、Al2O3-C 和 Al2O3-R）上的 Cu/W 纳米多层膜的应力状态和演化微观结构的影响。沉积态的 Cu 和 W 纳米层表现出根据 Cu <111> W <110> 的面外取向关系。在 Al2O3-C 和 Al2O3-R 基底上，Cu/W 纳米多层膜还形成了明显的面内织构，具体为 Cu {111}< 10 (1) over bar > W {110}< 00(1) over bar>>。在沉积状态和加热时，异位研究的铜纳米层的应力状态很大程度上是由更硬的钨纳米层中的累积应力施加的。在沉积状态下，W纳米层表现出比Cu纳米层大得多的面内压应力（即3.5 GPa对1.5 GPa），这两者主要源自沉积过程中产生的生长应力。在 500 摄氏度退火后，沉积态 Cu 纳米层中的生长应力得到松弛。W 纳米层中压应力的释放伴随着晶粒粗化，而晶粒粗化仅在纳米多层结构退化时发生。周期性层结构的退化在 750 +/- 900 摄氏度的范围内进行，并且与基材无关。由 AIP 出版社出版。
The functionality and reliability of nano-multilayered devices and components are largely affected by the stress evolution during fabrication, processing, and operation. The impact of thermal treatment on the stress state and evolving microstructure of Cu/W nano-multilayers, as deposited on different substrates (i. e., Si(001), Al2O3-C, and Al2O3-R) by magnetron sputtering, was investigated by in-situ high temperature X-ray diffraction and high-resolution scanning electron microcopy. The as-deposited Cu and W nanolayers exhibit an out-of-plane orientation relationship according to Cu < 111 > W < 110 >. On the Al2O3-C and Al2O3-R substrates, the Cu/W nanomultilayers also develop a pronounced in-plane texture given by Cu {111}< 10 (1) over bar > W {110}< 00(1)over bar>>. The stress state of the Cu nanolayers in the as-deposited state and upon heating, investigated ex-situ, is largely imposed by the accumulated stresses in the much stiffer W nanolayers. In the as-deposited state, the W nanolayers exhibit a much larger in-plane compressive stress than the Cu nanolayers (i. e., 3.5 GPa versus 1.5 GPa), which both mainly originate from growth stresses generated during the deposition process. The growth stresses in the as-deposited Cu nanolayers are relaxed after annealing at 500 degrees C. Relief of compressive stresses in the W nanolayers is accompanied by grain coarsening which only occurs upon degradation of the nano-multilayered structure. The degradation of the periodic layer structure proceeds in the range of 750 +/- 900 degrees C and is independent of the substrate. Published by AIP Publishing.