Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiNx:H
Temperature and Light-Induced Changes in Bulk and Passivation Quality of Boron-Doped Float-Zone Silicon Coated With SiNx:H
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温度和光引起的 SiNx:H 掺杂硼浮区硅的体积和钝化质量的变化
DOI：
10.1109/jphotov.2017.2649601
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发表时间：
2017
影响因子：
3
通讯作者：
G. Hahn
中科院分区：
文献类型：
--
作者：
D. Sperber;Adrian Heilemann;A. Herguth;G. Hahn
在这项研究中，据观察，硼掺杂的浮区硅涂覆氢化氮化硅显示出强烈的不稳定性，在有效的少数载流子寿命后，快速烧制步骤和随后的处理，在高温和照明。在这种处理期间，降解和恢复特征在从几分钟到几个月的时间尺度上都是可见的。为了进一步研究所观察到的行为，电晕充电系列，电容电压测量，和化学再钝化方法。结果表明，第一个快速的降解和恢复与体寿命的变化，它是观察到的快速射击步骤强烈影响这种体不稳定性。随后较慢的降解和恢复反映了有效表面复合速度的变化，这可以归因于化学钝化质量的变化。可以得出这样的结论，即当在快速烧制步骤之后将硼掺杂浮区硅用作假定稳定的高寿命参考材料时，必须小心。另外，可以说，氮化硅相关的钝化在快速烧制步骤之后在升高的温度和光照下可能远不稳定。
In this study, it is observed that boron-doped float-zone silicon coated with hydrogenated silicon nitride shows strong instabilities in effective minority carrier lifetime after a fast firing step and subsequent treatment at elevated temperatures and illumination. During such a treatment, both degradation and recovery features are visible over time scales from minutes to months. To further investigate the observed behavior, corona charging series, capacitance voltage measurements, and chemical repassivation methods are applied. It is shown that a first fast degradation and recovery is associated with changes in the bulk lifetime, and it is observed that the fast firing step strongly influences this bulk instability. A subsequent slower degradation and recovery reflects changes in the effective surface recombination velocity that can be attributed to changes in the chemical passivation quality. It can be concluded that care has to be taken when boron-doped float-zone silicon is used as a supposedly stable high lifetime reference material after a fast firing step. Additionally, it can be stated that a silicon nitride related passivation may be far from stable at elevated temperatures and illumination after a fast firing step.