Correlation of Particle-Induced Displacement Damage in Silicon
Correlation of Particle-Induced Displacement Damage in Silicon
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DOI：
10.1109/tns.1987.4337442
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发表时间：
1987-12
影响因子：
1.8
通讯作者：
G. Summers;E. Burke;C. Dale;E. A. Wolicki;P. Marshall;M. Gehlhausen
中科院分区：
文献类型：
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作者：
G. Summers;E. Burke;C. Dale;E. A. Wolicki;P. Marshall;M. Gehlhausen
相关的位移损坏所造成的影响，在几种类型的硅双极晶体管的质子，氘，氦离子，和1兆电子伏当量中子。这些测量值进行比较，计算的非电离能量沉积在硅作为粒子类型和能量的函数。使用3.7 - 175 MeV质子、4.3 - 37 MeV氘核和16.8 - 65 MeV氦离子测量了2N 2222 A和2N 2907 A开关晶体管以及2N 3055、2N 6678和2N 6547功率晶体管的位移损伤因子随集电极电流的变化。考虑了长期电离对位移损伤因子的影响。在计算非电离能量沉积的能量依赖性时，考虑了卢瑟福、核弹性和核非弹性相互作用以及Lindhard能量分配。主要结论如下：（1）给定带电粒子的位移损伤因子与1 MeV当量中子损伤因子之比随能量的变化关系，福尔斯落在一条与集电极电流无关的公共曲线上。2)给定能量的氘的破坏力大约是质子的两倍，氦离子的破坏力大约是质子的十八倍。
Correlation is made between the effects of displacement damage caused in several types of silicon bipolar transistors by protons, deuterons, helium ions, and by 1 MeV equivalent neutrons. These measurements are compared to calculations of the nonionizing energy deposition in silicon as a function of particle type and energy. Measurements were made of displacement damage factors for 2N2222A and 2N2907A switching transistors, and for 2N3055, 2N6678, and 2N6547 power transistors, as a function of collector current using 3.7 - 175 MeV protons, 4.3 - 37 MeV deuterons, and 16.8 - 65 MeV helium ions. Long term ionization effects on the value of the displacement damage factors were taken into account. In calculating the energy dependence of the nonionizing energy deposition, Rutherford, nuclear elastic, and nuclear inelastic interactions, and Lindhard energy partition were considered. The main conclusions of the work are as follows: 1) The ratio of the displacement damage factors for a given charged particle to the 1 MeV equivalent neutron damage factor, as a function of energy, falls on a common curve which is independent of collector current. 2) Deuterons of a given energy are about twice as damaging as protons and helium ions are about eighteen times as damaging as protons.