Low-temperature-deposited SnO2 films for efficient planar CH3NH3PbI3 photovoltaics
Low-temperature-deposited SnO2 films for efficient planar CH3NH3PbI3 photovoltaics
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用于高效平面 CH3NH3PbI3 光伏发电的低温沉积 SnO2 薄膜
DOI:
10.1007/s10853-020-05216-y
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发表时间:
2020-09
影响因子:
4.5
通讯作者:
Hao Wang
中科院分区:
文献类型:
--
作者:
Kai Zhang;Jinxia Duan;Feng Liu;Jun Zhang;Hao Wang
Low-temperature-synthesized electron transport layers (ETLs) are in demand for the industrialization and flexibility of perovskite solar cells (PeSCs). SnO 2 ETLs are prepared via chemical bath deposition at low temperature. Uniform SnO 2 ETLs with high crystallinity and transmittance are obtained from a 0.3 M SnCl 4 solution through a 100 °C heat treatment. They effectively transport electrons and weaken recombination loss in SnO 2 -based photovoltaics. SnO 2 -based PeSCs exhibit a power conversion efficiency (PCE) of 16.92% with a short-circuit current density ( J SC ) of 21.48 mA cm −2 and a fill factor (FF) of 73.62%. Secondary bath modification is proposed to mend the surface pinholes of SnO 2 ETLs and boost the photoelectric properties of SnO 2 -based devices. The photovoltaic performance of the devices based on modified SnO 2 (2-SnO 2 ) films exhibits an impressive increase compared with unembellished ones due to less pinholes and suppressed surface defects. The open circuit voltage ( V OC ) and FF of 2-SnO 2 -based photovoltaics are enhanced to 1.10 V and 76.71%, respectively, resulting in PCE to 18.04%. Simultaneously, the dark current and hysteresis of 2-SnO 2 -based PeSCs are reduced because the secondary bath refines the surface nanoparticles of ETLs, passivates defects and reduces charge recombination at ETL/perovskite interfaces. Accordingly, 2-SnO 2 -based photovoltaics with a large area (~ 1 cm 2 ) achieves 12.91% efficiency.
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