The effect of temperature on resistive ZnO layers and the performance of thin film CdTe solar cells
The effect of temperature on resistive ZnO layers and the performance of thin film CdTe solar cells
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DOI：
10.1016/j.tsf.2016.10.068
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发表时间：
2017-07-01
期刊：
影响因子：
2.1
通讯作者：
Walls, J. M.
中科院分区：
文献类型：
--
作者：
Bittau, F.;Abbas, A.;Walls, J. M.
高阻透明（HRT）层的使用已被证明可以提高包含薄CdS层的薄膜CdTe异质结构太阳能电池的效率。在本研究中，ZnO HRT层在不同的衬底温度下沉积在碱石灰玻璃和掺氟氧化锡涂层玻璃上，以实现结构，光学和电学表征。在CdS/CdTe太阳能电池中测试了等效薄膜的性能。ZnO的厚度限制在150 nm，沉积过程中衬底温度在20 ~ 400℃之间变化。完成器件的x射线衍射图和透射电子显微镜的横截面微观结构表明，当薄膜在较高的温度下沉积时，ZnO的生长得到了改善。薄膜电阻率在100℃时最低，在400℃时最高，范围为10(-2)ω。厘米到033厘米。高温沉积ZnO的微观结构生长得到改善，器件效率得到提高。(C) 2016年作者。Elsevier B.V.出版
The use of a highly resistive transparent (HRT) layer has been shown to increase the efficiency of thin film CdTe heterostructure solar cells incorporating a thin CdS layer. In this study ZnO HRT layers were deposited at different substrate temperatures on soda lime glass and on fluorine-doped tin oxide-coated glass to enable structural, optical and electrical characterization. The performance of equivalent films was tested within CdS/CdTe solar cells. The ZnO thickness was limited to 150 nm, whilst the substrate temperature was varied from 20 degrees C to 400 degrees C during deposition. X-ray diffraction patterns and transmission electron microscopy of the cross-sectional microstructure of completed devices showed that the growth of the ZnO is improved when the films are deposited at higher temperatures. Film resistivity was lowest at 100 degrees C and highest at 400 degrees C, ranging from 10(-2) Omega.cm to 033 Omega.cm. The high temperature deposited ZnO exhibits improved micro-structural growth and an improvement in device efficiency. (C) 2016 The Authors. Published by Elsevier B.V.