Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)
Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)
复制标题
DOI：
10.1116/1.4807715
复制
发表时间：
2013-07-01
影响因子：
1.4
通讯作者：
Palmstrom, Chris J.
中科院分区：
文献类型：
--
作者：
Kawasaki, Jason K.;Neulinger, Thomas;Palmstrom, Chris J.
Half Heuslers是目前用于高温热电研究的有吸引力的化合物家族，最近，由于其中一些化合物被提出为拓扑绝缘体，因此重新引起了人们的兴趣。NiTiSn属于18价电子半赫斯勒家族，预计是半导体的，尽管完全由金属元素组成。半赫斯勒化合物NiTiSn的分子束外延生长的演示。通过反射高能电子衍射和X射线衍射分析表明，NiTiSn薄膜是外延的单晶薄膜。依赖于温度的传输测量表明，膜可能是半导体的，但具有高的背景载流子密度指示高密度的电活性缺陷态。探讨了在同步辐射光电发射测量中保护样品表面的方法。这些方法可用于非常规材料表面电子结构的研究。(C)2013年美国真空学会。
The Half Heuslers are currently an attractive family of compounds for high temperature thermoelectrics research, and recently, there has been renewed interest since some of these compounds are proposed to be topological insulators. NiTiSn belongs to the family of 18 valence electron Half Heuslers that are predicted to be semiconducting, despite being composed entirely of metallic elements. The growth of the Half Heusler compound NiTiSn by molecular beam epitaxy is demonstrated. The NiTiSn films are epitaxial and single crystalline as observed by reflection high-energy electron diffraction and x-ray diffraction. Temperature dependent transport measurements suggest the films may be semiconducting, but with a high background carrier density indicative of a high density of electrically active defect states. Methods of protecting the sample surface for synchrotron-based photoemission measurements are explored. These methods may be applied to the study of surface electronic structure in unconventional materials. (C) 2013 American Vacuum Society.