New microfabrication technique by synchrotron radiation‐excited etching: Use of noncontact mask on a submicrometer scale
New microfabrication technique by synchrotron radiation‐excited etching: Use of noncontact mask on a submicrometer scale
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同步辐射激发蚀刻的新型微加工技术：在亚微米尺度上使用非接触掩模
DOI：
10.1063/1.111822
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发表时间：
1994
影响因子：
4
通讯作者：
Ken'ichiro Tanaka
中科院分区：
文献类型：
--
作者：
S. Terakado;T. Goto;M. Ogura;K. Kaneda;O. Kitamura;Shigeo Suzuki;Ken'ichiro Tanaka
研究了利用同步辐射（SR）激发的非接触掩模在亚微米尺度上对硅的刻蚀。非接触掩模的空白图案被复制在蚀刻表面上，并且在尺寸为0.4 μm的情况下实现了高度区域选择性蚀刻。样品上SR的空间光强分布决定了样品刻蚀部分的深度分布。
Synchrotron radiation (SR)‐excited etching of Si using a noncontact mask on a submicrometer scale has been investigated. The blank pattern of the noncontact mask was replicated on the etched surface and highly area‐selective etching was realized at the size of ∼0.4 μm. The spatial photointensity distribution of SR on the sample determined the depth profile of the etched part of the sample.