Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices
Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices
复制标题
氧化镓功率开关器件的电热建模与分析
DOI：
10.1115/ipack2019-6453
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
S. Graham
中科院分区：
文献类型：
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作者：
Ramchandra M. Kotecha;A. Zakutayev;W. Metzger;P. Paret;G. Moreno;Bidzina Kekelia;K. Bennion;B. Mather;S. Narumanchi;Samuel H. Kim;S. Graham
氧化镓是一种新兴的宽带隙材料，有望在不久的将来渗透到电力电子市场。本文提出了一种能够预测器件电学和热学特性的有限元氧化镓半导体模型。在Sentaurus环境中开发了二维器件结构的有限元模型。采用垂直的FinFET器件架构来评估器件的行为及其静态和动态特性。利用这种类型的器件架构实现增强模式器件操作，而不需要任何选择性区域掺杂。器件的动态热行为通过其短路行为来表征。基于器件的静态和动态特性，可以预见可以制造出适用于电力电子应用的可靠的垂直晶体管。
Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device’s behavior and its static and dynamic characteristics. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.