Electronic structure, bonding character, and thermoelectric properties of semiconducting rhenium silicide with doping
Electronic structure, bonding character, and thermoelectric properties of semiconducting rhenium silicide with doping
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DOI：
10.1103/physrevb.77.205207
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发表时间：
2008-05
影响因子：
3.7
通讯作者：
A. Qiu;Lanting Zhang;A. Shan;Jian-sheng Wu
中科院分区：
文献类型：
--
作者：
A. Qiu;Lanting Zhang;A. Shan;Jian-sheng Wu
