A noise model for the evaluation of defect states in solar cells.
A noise model for the evaluation of defect states in solar cells.
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DOI:
10.1038/srep29685
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发表时间:
2016-07-14
影响因子:
4.6
通讯作者:
Pagano S
中科院分区:
文献类型:
--
作者:
Landi G;Barone C;Mauro C;Neitzert HC;Pagano S
A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form and after artificial degradation with high energy protons. The evolution of the dominating defect properties is studied through noise spectroscopy.