Artificially modulated chemical order in thin films: A different approach to create ferro/antiferromagnetic interfaces
Artificially modulated chemical order in thin films: A different approach to create ferro/antiferromagnetic interfaces
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DOI：
10.1103/physrevb.82.134409
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发表时间：
2010-10-06
影响因子：
3.7
通讯作者：
Schreyer, A.
中科院分区：
文献类型：
--
作者：
Saerbeck, T.;Klose, F.;Schreyer, A.
我们报告一个独特的磁性交换相互作用的FePt 3薄膜，包括人工创建的铁磁（FM）/反铁磁（AFM）调制，但均匀的化学成分和外延整个膜。另一方面，化学顺序被调制，导致形成交替的FM/AFM层。为了确定单化学计量薄膜内的磁性结构的存在和形式，我们使用极化中子反射计，X射线/中子衍射和常规磁力计的独特组合。这种人工分层AFM/FM FePt 3表现出高的磁交换偏置，从而打开了可能性，研究这种磁现象在一个完美的晶格匹配系统。
We report on a unique magnetic exchange interaction in a thin film of FePt3, comprising an artificially created ferromagnetic (FM)/antiferromagnetic (AFM) modulation, but homogeneous chemical composition and epitaxy throughout the film. The chemical order, on the other hand, is modulated resulting in the formation of alternating FM/AFM layers. To determine the existence and form of the magnetic structure within the monostoichiometric thin film, we use a unique combination of polarized neutron reflectometry, x-ray/neutron diffraction, and conventional magnetometry. This artificial stratified AFM/FM FePt3 exhibits a high magnetic exchange bias thus opening up possibilities to study such magnetic phenomena in a perfectly lattice-matched system.