The Region-Exhaustive Fault Model
The Region-Exhaustive Fault Model
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区域穷举故障模型
DOI：
10.1109/ats.2007.78
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
S. Patil
中科院分区：
文献类型：
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作者：
A. Jas;S. Natarajan;S. Patil
当今深亚微米工艺的器件失效机制不能很好地用单一固定故障来建模，因此过去已经提出了几种先进的故障模型。提出了门穷举故障模型，以完全行使门，然后观察在可观察输出的结果响应。本文扩展了门穷举故障模型的目标更大的区域（门的集合）的假设，行使一个区域与一个穷举模式集可以产生覆盖率更大比例的未建模的缺陷。为了验证这一假设，我们使用逻辑邻近桥（LPB）故障模型作为未建模的缺陷和等级的区域和门穷举模式对LPB故障模型，以衡量其功效的替代品。我们表明，区域穷举模式更好地检测非目标LPB故障相比，使用门穷举或传统的固定故障模型获得的模式。
Device failure mechanisms of today's deep sub-micron processes are not well-modeled by single stuck-at faults, and hence several advanced fault models have been proposed in the past. Gate-exhaustive fault models were proposed to exercise a gate completely and then observe the resultant response at an observable output. This paper extends the gate-exhaustive fault model to target bigger regions (a collection of gates) with the hypothesis that exercising a region with an exhaustive pattern set can yield coverage on a larger proportion of unmodeled defects. To test out this hypothesis, we use the logic proximity bridge (LPB) fault model as a surrogate for unmodeled defects and grade the region and gate exhaustive patterns against the LPB fault model to gauge their efficacy. We show that region exhaustive patterns are better at detecting untargeted LPB faults compared to patterns obtained using gate exhaustive or traditional stuck-at fault models.