Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer
Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer
复制标题
具有能带工程电子阻挡层的 GaN 基 VCSEL 提高输出功率
DOI：
10.3390/mi10100694
复制
发表时间：
2019-10-01
期刊：
影响因子：
3.4
通讯作者：
Li, Mo
中科院分区：
文献类型：
--
作者：
Luo, Huiwen;Li, Junze;Li, Mo
垂直腔面发射激光器（VCSEL）与传统的边缘发射激光器相比具有独特的优势，近年来受到了广泛的关注。然而，由于器件内部异质界面处的内置极化导致大量电子泄漏，gan基VCSEL的输出功率仍然较低。为了提高输出功率，本文在VCSEL中提出了一种新的p型成分梯度AlxGa1−xN电子阻挡层（EBL）结构，取代了传统结构中的最后一个量子势垒（LQB）和EBL。仿真结果表明，与传统的基于gan的VCSEL相比，所提出的EBL能显著抑制漏电子，输出功率提高70.6%。
The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leakage caused by the built-in polarization at the heterointerface within the device. In this paper, in order to improve the output power, a new structure of p-type composition-graded AlxGa1−xN electron blocking layer (EBL) is proposed in the VCSEL, by replacing the last quantum barrier (LQB) and EBL in the conventional structure. The simulation results show that the proposed EBL in the VCSEL suppresses the leaking electrons remarkably and contributes to a 70.6% increase of the output power, compared with the conventional GaN-based VCSEL.