A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut.
复制标题
在纳米级的切割深处，高速刮擦的一种新型方法。
DOI：
10.1038/srep16395
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发表时间：
2015-11-09
影响因子：
4.6
通讯作者：
Zhang B
中科院分区：
文献类型：
--
作者：
Zhang Z;Guo D;Wang B;Kang R;Zhang B
在这项研究中，一种新的方法，高速划痕进行了对硅（Si）晶片在纳米级的切割深度，以调查的基本机制，在晶圆化的太阳能电池。用超精密研磨机以8.4至15 m/s的速度在直径为150 mm的Si晶片上进行划痕。单点金刚石的尖端半径分别为174，324，和786 nm，在研究中使用。研究发现，在芯片形成的开始，一个非晶层形成在最顶部的残留划痕，其次是原始的晶格下面。这与以前在低速刮擦和高速磨削中发现的在顶部有非晶层而在下面有损伤层不同。最终的宽度和深度的残余划痕在芯片形成的开始测量变化从288到316 nm，从49到62 nm，分别。在碎片或裂纹形成开始时，划痕中不存在高压相。
In this study, a novel approach of high speed scratching is carried out on silicon (Si) wafers at nanoscale depths of cut to investigate the fundamental mechanisms in wafering of solar cells. The scratching is conducted on a Si wafer of 150 mm diameter with an ultraprecision grinder at a speed of 8.4 to 15 m/s. Single-point diamonds of a tip radius of 174, 324, and 786 nm, respectively, are used in the study. The study finds that at the onset of chip formation, an amorphous layer is formed at the topmost of the residual scratch, followed by the pristine crystalline lattice beneath. This is different from the previous findings in low speed scratching and high speed grinding, in which there is an amorphous layer at the top and a damaged layer underneath. The final width and depth of the residual scratch at the onset of chip formation measured vary from 288 to 316 nm, and from 49 to 62 nm, respectively. High pressure phases are absent from the scratch at the onset of either chip or crack formation.