Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes
Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes
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DOI：
10.1021/acs.nanolett.7b05000
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发表时间：
2018-03-01
期刊：
影响因子：
10.8
通讯作者：
Duesberg, Georg S.
中科院分区：
文献类型：
--
作者：
Yim, Chanyoung;McEvoy, Niall;Duesberg, Georg S.
二硒化铂（PtSe 2）是第10族过渡金属二硫属化物（TMD），其具有独特的电子性质，特别是当从块体到单层形式时的半金属到半导体转变。本文报道了在n型硅衬底上生长二维PtSe 2薄膜的垂直混合肖特基势垒二极管（SBD）。二极管已被制造通过转移到SiO2/Si衬底上的大规模层状PtSe 2膜，合成的预沉积的Pt膜在后端的CMOS兼容的温度下的热辅助转换。光谱响应分析表明，在Si带隙以上的光子能量下，二极管的最大响应率为490 mA/W，而在Si带隙以下的光子能量下，二极管的响应率相对较弱，在0.1-1.5 mA/W的范围内。特别地，PtSe 2在红外中的光响应性允许PtSe 2被用作具有可调灵敏度的红外光吸收剂。我们的研究结果表明，PtSe 2是一个很有前途的选择，用于开发红外吸收剂和探测器的光电子应用与低温处理条件。
Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe2 thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe2 films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO2/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under a 3 Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1-1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe2 in infrared allows PtSe2 to be utilized as an absorber of infrared light with tunable sensitivity. The results of our study indicate that PtSe2 is a promising option for the development of infrared absorbers and detectors for optoelectronics applications with low-temperature processing conditions.