CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
复制标题
DOI：
10.1049/el:19780397
复制
发表时间：
1978-01-01
影响因子：
1.1
通讯作者：
ARIYOSHI, H
中科院分区：
文献类型：
--
作者：
IZUMI, K;DOKEN, M;ARIYOSHI, H
通过将氧离子（14O+）注入到硅中形成掩埋SiO2层。用俄歇谱分析了注氧硅衬底的杂质分布。在此衬底上外延生长的硅层显示出良好的单晶结构，和19级c.m.o.s.环形振荡器在操作中表现出高性能。
Buried SiO2, layers were formed by oxygen-ion (14O+) implantation into silicon. The impurity distribution of the oxygen-implanted silicon substrate was analysed by auger spectroscopy. The epitaxially-grown silicon layer on this substrate showed a good monocrystalline structure, and a 19-stage c.m.o.s. ring oscillator exhibited high performance in operation.