MD simulations for defect properties in beta-SiC under Irradiation -Energetics of interstitial clusters-

MD simulations for defect properties in beta-SiC under Irradiation -Energetics of interstitial clusters-
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辐照下 β-SiC 缺陷特性的 MD 模拟 -间隙簇能量学 -

DOI:
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发表时间:
2008
期刊:
Conference Proceeding of Fourth International Conference on Multiscale Materials Modeling, October 2008, Florida State University, Tallahassee, FL, USA
影响因子:
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通讯作者:
H. Heinisch. F. Gao. R. J. Kurtz
H. Heinisch. F. Gao. R. J. Kurtz
中科院分区:
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文献类型:
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作者:
Y. Watanabe;K. Morishita;A. Kohyama;H. Heinisch. F. Gao. R. J. Kurtz

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