Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0.67)
Suppression of composition modulation in In-rich InxGa1-xN layer with high In content (x similar to 0.67)
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高 In 含量的富 InxGa1-xN 层中成分调制的抑制（x 类似于 0.67）
DOI：
10.1002/pssa.201127307
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发表时间：
2011
影响因子：
2
通讯作者：
T
中科院分区：
文献类型：
--
作者：
Jeong;M; Lee;HS; Han;SK; Shin;EJ; Hong;SK; Lee;JY; Song;JH; Yao;T
在蓝宝石衬底上进行等离子体辅助分子束外延时，铟含量高达67%的In-rich InxGa 1-xN层的成分调制被抑制。发现更高的氮等离子体流速对于抑制富In InGaN层中的组分调制非常有效。X射线衍射、X射线能量色散谱和透射电子显微镜图像清楚地表明，随着氮气流速的增加，组成调制消失。
The composition modulation of in In‐rich InxGa1−xN layers with an indium content as high as ∼67% was suppressed in plasma‐assisted molecular beam epitaxy onc‐sapphire substrates. It was found that the higher nitrogen plasma flow rate was very effective in suppression of composition modulation in In‐rich InGaN layers. X‐ray diffraction, X‐ray energy dispersive spectroscopy, and transmission electron microscopic images clearly showed disappearance of composition modulation with increasing the nitrogen flow rate.