Monolithic on-chip integration of semiconductor waveguides, beamsplitters and single-photon sources
Monolithic on-chip integration of semiconductor waveguides, beamsplitters and single-photon sources
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DOI：
10.1088/0022-3727/48/8/085101
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发表时间：
2015-03-04
影响因子：
3.4
通讯作者：
Michler, Peter
中科院分区：
文献类型：
--
作者：
Joens, Klaus D.;Rengstl, Ulrich;Michler, Peter
将单光子源和探测器完全集成到光子晶体或板脊波导等波导结构中是目前线性光学量子计算和通信界的主要目标之一。在这里，我们提出了基于 III-V 族半导体平台的单光子片上实验的实现。单个半导体量子点被用作集成在脊形波导中的脉冲单光子源，并且通过在分束器的两个输出端口之间执行片外光子互相关测量来在单光子水平上验证片上波导分束器操作。观察到发射光子的偏振度超过 90%，并且对直线 (< 1.5 dB mm(-1)) 和弯曲 (类似于 (8.5 +/- 2.2) dB mm(-1)) 部分的波导传播损耗进行仔细表征，证明了这种基于 GaAs 的波导结构在更复杂的光子集成电路中的适用性。所提出的工作标志着朝着实现包括按需单光子发射器在内的完全集成光子量子电路迈出了重要一步。
The implementation of fully integrated single-photon sources and detectors into waveguide structures such as photonic crystals or a slab and ridge waveguide is currently one of the major goals in the linear optics quantum computation and communication community. Here, we present an implementation of a single-photon on-chip experiment based on a III-V semiconductor platform. Individual semiconductor quantum dots were used as pulsed single-photon sources integrated in ridge waveguides, and the on-chip waveguide-beamsplitter operation is verified on the single-photon level by performing off-chip photon cross-correlation measurements between the two output ports of the beamsplitter. A degree of polarization of the emitted photons above 90% is observed and a careful characterization of the waveguide propagation losses in straight (< 1.5 dB mm(-1)) and bent (similar to (8.5 +/- 2.2) dB mm(-1)) sections documents the applicability of such GaAs-based waveguide structures in more complex photonic integrated circuits. The presented work marks an important step towards the realization of fully integrated photonic quantum circuits including on-demand single-photon emitters.