Indium-tin oxide thin films prepared by chemical vapor deposition
Indium-tin oxide thin films prepared by chemical vapor deposition
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DOI：
10.1063/1.349189
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发表时间：
1991-08
影响因子：
3.2
通讯作者：
T. Maruyama;K. Fukui
中科院分区：
文献类型：
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作者：
T. Maruyama;K. Fukui
采用常压化学气相沉积法制备了氧化铟锡透明导电薄膜。原料为乙酰丙酮铟和乙酰丙酮锡，无毒且易于处理。在350-500 °C范围内的反应温度下获得多晶膜。对于在450 °C下沉积的215 nm厚的膜，电阻率为1.8 × 10−4 Ω cm，并且在高于400 nm的波数范围内透射率大于90%。该膜的Sn/In原子比为0.031。利用霍尔效应测量了薄膜的载流子浓度和迁移率，讨论了锡掺杂对薄膜结构和特性的影响。
Transparent conductive indium‐tin oxide thin films were prepared by an atmospheric‐pressure chemical vapor deposition method. The source materials were indium acetylacetonate and tin (II) acetylacetonate which are nontoxic and easy to handle. The polycrystalline films were obtained at a reaction temperature in the range of 350–500 °C. For the 215‐nm‐thick film deposited at 450 °C, the resistivity was 1.8 × 10−4 Ω cm, and the transmittance was more than 90% in the wave number range of above 400 nm. The atomic ratio Sn/In of the film was 0.031. The effects of tin doping on the structure and characteristics of the film were discussed on the basis of the carrier concentration and mobility which were measured by using the Hall effect.