Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility
Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility
复制标题
DOI：
10.1063/1.3500465
复制
发表时间：
2010-11
影响因子：
3.2
通讯作者：
M. Chu;A. Koehler;Amit Gupta;T. Nishida;S. Thompson
中科院分区：
文献类型：
--
作者：
M. Chu;A. Koehler;Amit Gupta;T. Nishida;S. Thompson
考虑应力对二维电子气(2DEG)片载流子密度和电子迁移率的影响，从理论上确定了AlGaN/GaN高电子迁移率晶体管的规范因子。研究了外加机械应力前后AlGaN和GaN层的自发极化和压电极化的差异，以计算应力变化的二维电子气密度。在sp3d5-sp3经验紧束缚模型中引入应变，得到了电子有效质量在双轴和单轴应力下的变化。模拟得到的纵向规范因子(−7.9±5.2)与实验结果(−2.4±0.5)是一致的。
The gauge factor of AlGaN/GaN high-electron-mobility transistor was determined theoretically, considering the effect of stress on the two-dimensional electron gas (2DEG) sheet carrier density and electron mobility. Differences in the spontaneous and piezoelectric polarization between the AlGaN and GaN layers, with and without external mechanical stress, were investigated to calculate the stress-altered 2DEG density. Strain was incorporated into a sp3d5–sp3 empirical tight-binding model to obtain the change in electron effective masses under biaxial and uniaxial stress. The simulated longitudinal gauge factor (−7.9±5.2) is consistent with experimental results (−2.4±0.5) obtained from measurements eliminating parasitic charge trapping effects through continuous subbandgap optical excitation.