Pseudo-CMOS: A Design Style for Low-Cost and Robust Flexible Electronics
Pseudo-CMOS: A Design Style for Low-Cost and Robust Flexible Electronics
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DOI：
10.1109/ted.2010.2088127
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发表时间：
2011-01-01
影响因子：
3.1
通讯作者：
Cheng, Kwang-Ting
中科院分区：
文献类型：
--
作者：
Huang, Tsung-Ching;Fukuda, Kenjiro;Cheng, Kwang-Ting
薄膜晶体管（TFT）是在低成本基板上实现的柔性电子器件的关键元件。然而，大多数TFT技术仅具有单调型（n型或p型）器件。在本文中，我们提出了一种新的设计风格的伪CMOS柔性电子，只使用单型单V-T TFT，但具有可比的性能与互补型或双V-T设计。因此，制造成本和复杂性可以显着降低，而电路的产量和可靠性提高与内置的后制造可调性。数字单元以两种不同的TFT技术制造，即，p型自组装单层有机TFT和n型金属氧化物InGaZnO TFT，以验证所提出的伪CMOS设计风格。据我们所知，这是第一个设计解决方案，已被实验证明，以实现两种类型的TFT技术的上级性能。
Thin-film transistors (TFTs) are a key element of flexible electronics implemented on low-cost substrates. Most TFT technologies, however, have only monotype-either n- or p-type-devices. In this paper, we propose a novel design style Pseudo-CMOS for flexible electronics that uses only monotype single-V-T TFTs but has comparable performance with the complementary-type or dual-V-T designs. The manufacturing cost and complexity can therefore be significantly reduced, whereas the circuit yield and reliability are enhanced with built-in postfabrication tunability. Digital cells are fabricated in two different TFT technologies, i.e., p-type self-assembled-monolayer-organic TFTs and n-type metal-oxide InGaZnO TFTs, to validate the proposed Pseudo-CMOS design style. To the best of our knowledge, this is the first design solution that has been experimentally proven to achieve superior performance for both types of TFT technologies.