Enhancing the conductivity of transparent graphene films via doping
Enhancing the conductivity of transparent graphene films via doping
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DOI：
10.1088/0957-4484/21/28/285205
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发表时间：
2010-07-16
期刊：
影响因子：
3.5
通讯作者：
Kong, Jing
中科院分区：
文献类型：
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作者：
Kim, Ki Kang;Reina, Alfonso;Kong, Jing
我们报道了化学掺杂（p型）来降低石墨烯薄膜的方块电阻，用于高性能透明导电薄膜的应用。使用聚甲基丙烯酸甲酯将通过化学气相沉积合成的石墨烯薄膜转移到氧化硅和石英基板上。使用硝基甲烷中的 AuCl3 来掺杂石墨烯薄膜，根据掺杂浓度，方块电阻最多可降低 77%。通过表征掺杂石墨烯薄膜的拉曼 G 带证实了 p 型掺杂行为。原子力显微镜和扫描电子显微镜图像揭示了金颗粒在薄膜上的沉积。 Au颗粒的尺寸为10-100 nm。还通过将石墨烯薄膜转移到石英和聚对苯二甲酸乙二醇酯基板上来研究掺杂的影响。透过率87%时，方块电阻达到150Ω/sq，与氧化铟锡导电薄膜相当。掺杂效应仅在1-2层石墨烯中表现出来，而在多层石墨烯中则不表现出来。这种方法促进了石墨烯薄膜作为透明导电电极的众多应用。
We report chemical doping (p-type) to reduce the sheet resistance of graphene films for the application of high-performance transparent conducting films. The graphene film synthesized by chemical vapor deposition was transferred to silicon oxide and quartz substrates using poly(methyl methacrylate). AuCl3 in nitromethane was used to dope the graphene films and the sheet resistance was reduced by up to 77% depending on the doping concentration. The p-type doping behavior was confirmed by characterizing the Raman G-band of the doped graphene film. Atomic force microscope and scanning electron microscope images reveal the deposition of Au particles on the film. The sizes of the Au particles are 10-100 nm. The effect of doping was also investigated by transferring the graphene films onto quartz and poly(ethylene terephthalate) substrates. The sheet resistance reached 150 Omega/sq at 87% transmittance, which is comparable to those of indium tin oxide conducting film. The doping effect was manifested only with 1-2 layer graphene but not with multi-layer graphene. This approach advances the numerous applications of graphene films as transparent conducting electrodes.