Efficient dopants for ZrNiSn-based thermoelectric materials
Efficient dopants for ZrNiSn-based thermoelectric materials
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DOI：
10.1088/0953-8984/11/7/004
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发表时间：
1999-02-22
影响因子：
2.7
通讯作者：
Bucher, E
中科院分区：
文献类型：
--
作者：
Hohl, H;Ramirez, AP;Bucher, E
四种有效的 n 型掺杂剂已被发现用于 ZrNiSn 基热电材料。它们是位于锆位点的 Nb 或 Ta，以及位于锡位点的 Sb 或 Bi。没有找到适合镍位点的掺杂剂。在(Zr0.5Hf0.5)(0.99)Ta0.01NiSn合金中，在300 K下测得功率因数为S(2)sigma = 22 mu W K-2 cm(-1)，导热系数为kappa = 5.4 x 10(-2) W K-1 cm(-1)，得到无量纲品质因数ZT = 0.12。这些值在 700 K 时增加至 S(2)sigma 近似于 40 mu W K-2 cm(-1)，ZT 近似于 0.5。
Four efficient n-type dopants have been found for ZrNiSn-based thermoelectric materials. These are Nb or Ta at the zirconium sites, and Sb or Bi at the tin sites. No suitable dopant was found for the nickel sites. In a (Zr0.5Hf0.5)(0.99)Ta0.01NiSn alloy, a power factor of S(2)sigma = 22 mu W K-2 cm(-1) and a thermal conductivity of kappa = 5.4 x 10(-2) W K-1 cm(-1) were measured at 300 K, resulting in a dimensionless figure of merit ZT = 0.12. These values are increased to S(2)sigma approximate to 40 mu W K-2 cm(-1) and ZT approximate to 0.5 at 700 K.