A hybrid 6H-SiC temperature sensor operational from 25/spl deg/C to 500/spl deg/C
A hybrid 6H-SiC temperature sensor operational from 25/spl deg/C to 500/spl deg/C
复制标题
混合 6H-SiC 温度传感器，工作温度范围为 25/spl deg/C 至 500/spl deg/C
DOI：
10.1109/95.536843
复制
发表时间：
1996
期刊：
影响因子：
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通讯作者：
U. Rao
中科院分区：
文献类型：
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作者：
J. Casady;W. Dillard;R. Johnson;U. Rao
在跨导(g/subm/)、夹断电压(V/subP/)、输出电阻(r/sub0/)、输入电阻(R/subIn/)、栅源电压为零时的漏源电流(I/subDSS/)、栅源反向偏置漏电流(I/subGSS/)、关态漏极到源极电流(I/SUB DSS(OFF)/)和噪声功率谱密度(S/SUB V/)。6H-SiCJFET用于奥本大学制造的混合温度监控电路(测试范围从-196/spl deg/C到500/spl deg/C)，用于许多工业应用。用集成电路仿真程序(SPICE)对温度监测电路的输出电压进行了仿真，仿真结果与温度变化的测量数据吻合较好。对测量数据的线性回归(LR)分析表明，测量的输出电压与温度之间存在非常敏感的(/spl sim/2.3 mV//spl deg/)和显著的线性关系(相关系数=-0.0996...在25/spl deg/C至5 0 0/spl deg/C范围内)。低于-50/SPL deg/C时，输出变为非线性，可能是由于载波冻结效应。据我们所知，这是第一次成功地将碳化硅有源器件应用到温度传感器中，该传感器表现出高达500/spl deg/C的稳定工作。
6H-SiC buried-gate n-channel depletion-mode junction field-effect transistors (JFETs) were characterized from 25/spl deg/C to 350/spl deg/C in terms of transconductance (g/sub m/), pinchoff voltage (V/sub P/), output resistance (r/sub o/), input resistance (R/sub in/), drain-to-source current at zero gate-to-source voltage (I/sub DSS/), gate-to-source reverse biased leakage current (I/sub GSS/), off-state drain-to-source current (I/sub DSS(off)/), and noise power spectral density (S/sub V/). The 6H-SiC JFET's were used in a hybrid temperature monitoring circuit (tested from -196/spl deg/C to 500/spl deg/C) fabricated at Auburn University for use in numerous industrial applications. Simulation program with integrated circuit emphasis (SPICE) simulations of the temperature monitoring circuit's output voltage corresponded well with measured data as a function of temperature. Linear regression (LR) analysis of measured data revealed a notably sensitive (/spl sim/2.3 mV//spl deg/), and an eminently linear (correlation coefficient =-0.0996...over 25/spl deg/C to 500/spl deg/C range) relationship between the measured output voltage and temperature. Below -50/spl deg/C, the output became nonlinear, presumably from carrier freeze-out effects. To the best of our knowledge, this represents the first successful implementation of SiC active devices into a temperature sensor which demonstrated stable operation up to 500/spl deg/C.