Carrier mobility model for GaN
Carrier mobility model for GaN
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DOI：
10.1016/s0038-1101(02)00256-3
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发表时间：
2003-01-01
影响因子：
1.7
通讯作者：
Khan, MA
中科院分区：
文献类型：
--
作者：
Mnatsakanov, TT;Levinshtein, ME;Khan, MA
在宽的温度（50 ≤ T ≤ 1000 K）和浓度（10（14）≤ N ≤ 10（19）cm（-3））范围内，获得了描述氮化镓（GaN）低场迁移率的温度和浓度依赖性的简单解析近似。研究了温度T.也获得了在掺杂水平上迁移率P处于最大值的位置。所得结果可直接用于GaN基器件的计算机模拟。(C)2002爱思唯尔科技有限公司。保留所有权利。
Simple analytical approximation has been obtained to describe the temperature and concentration dependencies of the low-field mobility in gallium nitride (GaN) in wide temperature (50 less than or equal to T less than or equal to 1000 K) and concentration (10(14) less than or equal to N less than or equal to 10(19) cm(-3)) ranges. The dependence of the temperature T. at which the mobility p is at a maximum on the doping level is also obtained. Results obtained can be directly used for computer simulation of GaN-based devices. (C) 2002 Elsevier Science Ltd. All rights reserved.