Pressure-induced growth evolution of different ZnO nanostructures by a pulsed laser ablation method
Pressure-induced growth evolution of different ZnO nanostructures by a pulsed laser ablation method
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DOI：
10.1166/sam.2012.1301
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发表时间：
2012-03
影响因子：
0.9
通讯作者：
P. Zhang;G. Zhou;H. Gong;Hongyan Xu;D. Nakamura;T. Okada;H. Zeng;Bingqiang Cao
中科院分区：
文献类型：
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作者：
P. Zhang;G. Zhou;H. Gong;Hongyan Xu;D. Nakamura;T. Okada;H. Zeng;Bingqiang Cao
采用脉冲激光烧蚀沉积生长法成功地实现了ZnO纳米结构从二维有序排列到一维纳米线阵列再到零维纳米颗粒的生长，并证明了生长压力是形成不同ZnO纳米结构的决定性因素.在较低的压力下，由于通过气-固过程在ZnO润湿层的晶界处的优选成核，所以ZnO生长。在中等生长压力下，ZnO纳米线的生长可以用纳米粒子辅助脉冲激光沉积过程来描述。在较高的生长压力下，由于烧蚀后的ZnO团簇与背景气体之间的强烈碰撞，仅沉积出纳米颗粒。这些ZnO纳米结构阵列在c切蓝宝石衬底上具有优选的c轴生长取向。研究了其光致发光和场发射特性。
ZnO nanostructure growth evolution from well-aligned two-dimensional nanowalls to one-dimensional nanowire arrays and finally to zero-dimensional nanoparticles was successfully demonstrated by a pulsed laser ablation and deposition growth method, where the growth pressure was proved to be the determinant factor for the formation of different ZnO nanostructures. At lower pressure, nanowall grew due to a prefer nucleation at the grain boundary of a ZnO wetting layer via a vapor–solid process. At middle growth pressure, the ZnO nanowire growth can be described with a nanoparticle-assisted pulsed laser deposition process. At higher growth pressure, due to the strong collision between the ablated ZnO clusters and background gas, only nanoparticles were deposited. These ZnO nanostructured arrays had a preferred c-axis growth orientation on c-cut sapphire substrates. The photoluminescence and field emission properties were also studied.