Pure spin current injection of single-layer monochalcogenides
Pure spin current injection of single-layer monochalcogenides
复制标题
单层单硫属化物的纯自旋电流注入
DOI：
10.1088/2053-1591/acbf99
复制
发表时间：
2023
影响因子：
2.3
通讯作者：
Fregoso, Benjamin M
中科院分区：
文献类型：
--
作者：
Mendoza, Bernardo S;Grillo, Simone;Juárez-Reyes, Lucila;Fregoso, Benjamin M
我们计算了铁电单层SnS、SnSe、GeS和GeSe的纯自旋电流注入谱。该形式考虑了通过自旋-轨道耦合分裂能量的光激发导态的相干自旋动力学。利用密度泛函理论计算了电子自旋速度作为全电子能带结构方案中入射光子能量和线偏振光角度的函数。我们发现，SnS、SnSe、GeS和GeSe的峰值速度分别为520、360、270和370 Km s−1，比大块半导体（如GaAs和CdSe）的峰值速度大一个数量级。有趣的是，在一定的光子能量范围内，自旋速度几乎与光的偏振方向无关。我们的研究结果表明，单层SnS， SnSe， GeS和GeSe是自旋电子学应用中按需产生自旋电流的候选材料。
We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account the coherent spin dynamics of optically excited conduction states split in energy by spin–orbit coupling. The velocity of the electron's spins is calculated as a function of incoming photon energy and angle of linearly polarized light within a full electronic band structure scheme using density functional theory. We find peak speeds of 520, 360, 270 and 370 Km s− 1 for SnS, SnSe, GeS and GeSe, respectively which are an order of magnitude larger than those found in bulk semiconductors, eg, GaAs and CdSe. Interestingly, the spin velocity is almost independent of the direction of polarization of light in a range of photon energies. Our results demonstrate that single-layer SnS, SnSe, GeS and GeSe are candidates to produce on demand spin-current in spintronics applications.