Analysis of the wire/substrate interface during ultrasonic bonding process
Analysis of the wire/substrate interface during ultrasonic bonding process
复制标题
超声波键合过程中导线/基板界面分析
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
J. Hermsdorf
中科院分区：
文献类型：
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作者：
Y. Long;F. Dencker;Andreas Isaak;Chun Li;M. Wurz;J. Twiefel;J. Wallaschek;F. Schneider;J. Hermsdorf
超声波引线键合技术自60年代问世以来，已广泛应用于半导体封装工业。然而，结合过程的机制仍然不清楚。根据现有技术，极短的键合过程可分为四个阶段。在键合界面的这些阶段进行了分析，无论是从侧视图或从2-D视图，但只有在键合过程后，当电线被删除或切断。在键合界面的二维实时观察，这是有益的，更深入地了解这些阶段，还没有进行。在这项工作中，使用透明玻璃作为基板，并在玻璃下方安装高速观察系统，以从二维视图实时观察不同的相。首先观察到线/基底接触面积和摩擦面积以及它们随时间的膨胀。在此期间，可以检测到氧化皮破损区域。然后从中心区域出现与微焊缝形成有关的静态暗区。在该区域的膨胀期间，一些氧化物保留在该静态区域内，而大多数氧化物被带到外围接触区域。在接触区域和静止区域的延伸期间，摩擦继续。这些发现为引线键合过程提供了更深入的见解。
The ultrasonic wire bonding has been applied in the semiconductor packaging industry ever since its innovation in the 1960s. The mechanisms of the bonding process, however, are still unclear. According to state-of-the-art, the extremely short bonding process can be divided into four phases. These phases at the bonding interface were analyzed either from a side view or from a 2-D view but only after the bonding process when the wire was removed or cut. A 2-D real-time observation at the bonding interface, which is beneficial to a deeper understanding on these phases, has not been conducted. In this work, a transparent glass was used as the substrate and a high-speed observation system was installed underneath the glass to real-time observe the different phases from a 2-D view. The wire/substrate contact area and the friction area as well as their expansion over time were first observed. During this period, the oxide scale breakage area can be detected. A static dark area related to the formation of microwelds then appeared from the central region. During the expansion of this area, some oxides retained within this static area while most oxides were carried to the peripheral contact area. Friction continued during the extension of the contact area and the static area. These findings provide a deeper insight into the wire bonding process.