Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs
Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs
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AlGaN/GaN HEMT 随时间变化的电场退化分析
DOI：
10.1109/ted.2014.2336248
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发表时间：
2014
影响因子：
3.1
通讯作者：
J. Shealy
中科院分区：
文献类型：
--
作者：
M. D. Hodge;E. Heller;R. Vetury;J. Shealy
作者报告了AlGaN/GaN HEMT在高电场条件下应力进入永久退化状态的电学和光学分析，证明了关断状态漏电流的增加和击穿电压的降低。提出了一种对AlGaN/GaN HEMT器件进行应力测试的方法，该方法可以在接近击穿电压的情况下，保护器件免受灾难性故障的影响。使用这种应力方法，进行了详细的研究，以观察器件退化，限制在关闭状态下的安全操作。电分析表明，定量的肖特基特性的栅极二极管的应力退化，并建议一个局部缺陷。光学分析证实了通过电致发光（EL）点上的栅极手指的应力侧的局部退化。它示出，在退化的设备中的主导EL网站可以观察到之前的应用程序的应力。最后，通过热成像证实了应力器件的局部EL发射是主要的栅极泄漏路径。这些结果提出了一种识别和理解限制GaN HEMT安全工作区域的故障机制的方法。
The authors report on an electrical and optical analysis of AlGaN/GaN HEMTs stressed under high electric field conditions into a state of permanent degradation, evidenced by an increase in OFF-state leakage current and a reduction in breakdown voltage. A method of stress testing AlGaN/GaN HEMTs to voltages close to breakdown while protecting the device from catastrophic failure is presented. Using this stress method, a detailed study was performed to observe device degradation that limits safe operation in the OFF-state. Electrical analysis reveals that quantitatively the Schottky properties of the gate diode are degraded by the stress and suggests a localized defect. An optical analysis confirms localized degradation via electroluminescence (EL) spots on the stressed side of the gate finger. It is shown that the dominant EL site in the degraded device may be observed prior to the application of stress. Finally, it is confirmed that the localized EL emission of the stressed device is the dominant gate leakage path via thermal imaging. These results suggest a method for identifying and understanding the failure mechanisms that limit the safe operating area of GaN HEMTs.
影响因子：
4
作者：
M. M. Bajo-M.;C. Hodges;M. Uren;Martin Kuball
通讯作者：
M. M. Bajo-M.;C. Hodges;M. Uren;Martin Kuball