Quantitative examination of the thermoelectric power of n-type Si in the phonon drag regime
Quantitative examination of the thermoelectric power of n-type Si in the phonon drag regime
复制标题
声子拖曳状态下 n 型硅热电势的定量研究
DOI：
10.1063/1.345250
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发表时间：
1990
影响因子：
3.2
通讯作者：
E. Behnen
中科院分区：
文献类型：
--
作者：
E. Behnen
理论和实验之间的定量比较的n型硅在低温下，其中声子的晶界散射是占主导地位的热电势。Seebeck系数的表达式是通过同时求解电子和声子的耦合Boltzmann方程得到的。热电功率是从两种不同施主浓度（ND=8×1014 cm−3和7×1015 cm−3）的样品在25至200 K的温度范围内测量的，其中通过蚀刻样品（370-73 μm）来改变厚度。声子平均自由程的晶体边界散射，从实验热功率确定，同意以及从理论的热导率校正的声子速度的兴趣。一个额外的测量的热导率产生的声子-声子散射的平均自由程，这是约两个数量级小于从热电获得。这种差异证实了双...
A quantitative comparison between theory and experiment is presented for the thermoelectric power of n‐type Si at low temperatures, where crystal boundary scattering of phonons is predominant. The expression for the Seebeck coefficient is obtained by simultaneously solving the coupled Boltzmann equations for electrons and phonons. The thermoelectric power is measured from samples of two different donor concentrations (ND=8×1014 cm−3 and 7×1015 cm−3) at temperatures ranging from 25 to 200 K, where the thickness is varied by etching the samples (370–73 μm). The phonon mean free path for crystal boundary scattering, determined from experimental thermopower, agrees well with that gained from the theory of thermal conductivity corrected for the phonon velocities of interest. An additional measurement of the thermal conductivity yields the mean free path for phonon–phonon scattering, which is about two orders of magnitude less than that obtained from thermopower. This difference confirms the influence of the di...