Synthesis of GaN Crystals Through Solid-State Metathesis Reaction Under High Pressure
Synthesis of GaN Crystals Through Solid-State Metathesis Reaction Under High Pressure
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DOI：
10.1021/cg801017h
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发表时间：
2009-03-01
影响因子：
3.8
通讯作者：
He, Duanwei
中科院分区：
文献类型：
--
作者：
Lei, Li;He, Duanwei
Well-crystallized gallium nitride (GaN) crystals are prepared through an untraditional solid-state metathesis (SSM) reaction under high pressure between varying phases of Lithium metagallate (LiGaO2) and boron nitride (BN). The advantage of the method lies in the potential energy and cost savings over other conventional synthetic routes. Our results also demonstrate that lithium borate (LiBO2) may be a new solution of GaN for large crystal growth. This discovery not only leads to a better understanding of the mechanisms of SSM reactions but also provides a starting point for mass production and growth of large single crystals of GaN from SSM reactions under high pressure.
